A method for producing a gate cut structure on an array of semiconductor fins. Interuniversity Microelectronics Centre
The method of the invention is performed on a substrate (2) comprising on its surface an array of parallel semiconductor fins (1), and at least one dummy gate (4) oriented transversally to the fins, and flanked on each side by a spacer (5) and an interlayer dielectric (ILD) region (6). Replacement metal gate processing is applied to the substrate, wherein a gate dielectric (10) and a metal gate stack (11,12) replaces the dummy gates. In accordance with the invention, thinning of the metal gate stack stops short of fully removing the metal and is followed by etching back the metal gate to form ...