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Diffusion-Mediated Growth and Size-Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates KU Leuven
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Understanding the growth mechanisms during the early stages of atomic layer deposition (ALD) is of interest for several applications including thin film deposition, catalysis, and area-selective deposition. The surface dependence and growth mechanism of (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)ruthenium and O2 ALD at 325 °C on HfO2, Al2O3, OH, and SiOSi terminated SiO2, and organosilicate ...
Surface-dependent adsorption and diffusion processes in area-selective deposition of ruthenium KU Leuven
Vapour-phase chemical deposition techniques rely on an interplay of adsorption, diffusion, reaction, and desorption processes, all of which can be surface-dependent. Area-selective deposition (ASD) exploits this surface dependence to deposit material selectively on a target area. Ruthenium receives increasing interest for several applications, including conductors for nanoelectronic interconnects, etch-resistant hardmasks, and heterogeneous ...