Method for connecting a buried interconnect rail and a semiconductor fin in an integrated circuit chip. Interuniversity Microelectronics Centre
The invention is related to an integrated circuit chip having fin-based active devices in the front end of line, and in particular to the electrical connection between a contact area (5a) on a semiconductor fin (1a), such as an epitaxially grown source or drain contact area of a transistor, and a buried interconnect rail (4). According to the invention, the connection is realized without the intervention of a metallization level formed above the active devices in the IC. Instead, an interconnect via (15) is produced between the rail (4) and a lateral portion of the contact area (5a), wherein ...