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Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers Hasselt University
The methane concentration dependence of the plasma gas phase on surface morphology and boronincorporation in single crystal, boron-doped diamond deposition is experimentally and computationallyinvestigated. Starting at 1%, an increase of the methane concentration results in an observable increase ofthe B-doping level up to 1.7 1021cm 3, while the hole Hall carrier mobility decreases to0.7±0.2 cm2V 1s 1. For B-doped SCDfilms grown at 1%, 2%, and ...
On the electrical properties of sputter deposited thin films : the role of energy and impurity flux Ghent University
The energy available for an adatom diffusing on the substrate surface is an important parameter with regard to the morphological and structural properties of a thin film. A change of the available energy during film growth can be achieved by a modification of the process parameters. However, quite often the implied variation causes also an alteration of the impurity-to-metal impingement flux ratio on the substrate. In this work, the influence of ...
Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers Ghent University Hasselt University
Incorporation and localization of substitutional $Mn^{2+}$ ions in cubic ZnS quantum dots University of Antwerp
Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dotsQDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed ...
High phosphorous incorporation in (100)-oriented MP CVD diamond growth Hasselt University
Diamond n-type layers are crucial for the development of a new bipolar diamond-based electronic technology. However, the difficulties to incorporate impurity atoms into the diamond lattice make its growth a stage of technological research still in progress. Phosphorus doping has been carried out successfully on (111)-oriented diamond substrates, reaching high concentrations and good reproducibility. Nevertheless, such reproducible results have ...
Nitrogen Incorporated (Ultra)Nanocrystalline Diamond Films for Field Electron Emission Applications Hasselt University
Diamond is eminent to own a series of outstanding physical and chemical properties, thus rendering it to be a strong cold cathode material for field electron emission (FEE) applications. FEE from diamond materials comprises the supply of electrons to the conduction band of the materials, transport through bulk, and lastly emission at the surface. In this chapter, the enhancement in the FEE characteristics of nitrogen incorporated ...
The role of cell-mediated immunity against influenza and its implications for vaccine evaluation Ghent University
Influenza vaccines remain the most effective tools to prevent flu and its complications. Trivalent or quadrivalent inactivated influenza vaccines primarily elicit antibodies towards haemagglutinin and neuraminidase. These vaccines fail to induce high protective efficacy, in particular in older adults and immunocompromised individuals and require annual updates to keep up with evolving influenza strains (antigenic drift). Vaccine efficacy ...
First-principles study of neutral defects in Fe-doped cubic barium titanate KU Leuven
© 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved. The DFT formalism within the GGA+U approximation has been used to investigate the effect of iron doping in the cubic phase of barium titanate. It has been found that aliovalent incorporation of iron at titanium sites, with charge compensation by the creation of oxygen vacancies, is the mode with the lowest energy, although self-compensation may exhibit similar energies under some ...
Properties of ultrathin molybdenum films for interconnect applications Interuniversity Microelectronics Centre KU Leuven
The structural and electrical properties of Mo thin films with thicknesses between 3 and 50 nm, deposited by physical vapor deposition, have been evaluated in order to assess the potential of Mo as an alternative to Cu or W for nano-interconnect applications. Mo films deposited on SiO2/Si (100) were polycrystalline with randomly oriented grains close to the interface and the progressive formation of a (110) texture above 5 nm film thickness. ...