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Researcher
Stefan Decoster
- Disciplines:Classical physics, Elementary particle and high energy physics, Other physical sciences, Applied mathematics in specific fields, Quantum physics, Nuclear physics, Condensed matter physics and nanophysics, Instructional sciences
Affiliations
- Nuclear and Radiation Physics (Division)
Member
From1 Oct 2004 → 14 Jul 2012
Projects
1 - 3 of 3
- The lattice site of impurities in semiconductors: identification and manipulation.From1 Jan 2012 → 31 Dec 2017Funding: FWO research project (including WEAVE projects)
- Resolving the atomic-scale local surroundings of impurities in group IV semiconductors.From1 Oct 2010 → 15 Jul 2012Funding: FWO fellowships
- Lattice location study of dopant imputities in group-IV semiconductors.From1 Oct 2009 → 30 Sep 2010Funding: BOF - Other initiatives
Publications
1 - 10 of 18
- Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping(2017)
Authors: Stefan Decoster
Pages: 29 - 34 - Electrical and structural properties of In-implanted Si1-xGex alloys(2016)
Authors: Stefan Decoster
- EXAFS study of the structural properties of In and In plus C implanted Ge(2016)
Authors: Stefan Decoster
- Structural and electrical properties of In-implanted Ge(2015)
Authors: Stefan Decoster
- Single Crystalline GeSn On Silicon By Solid Phase Crystallization(2012)
Authors: Ruben Lieten, Stefan Decoster, Mariela Andrea Menghini, Maria Seo, André Vantomme, Jean-Pierre Locquet
Pages: 915 - 920 - Diluted manganese on the bond-centered site in germanium(2010)
Authors: Stefan Decoster, Stefaan Cottenier, Ulrich Wahl, Lino da Costa Pereira, André Vantomme
- Lattice location study of ion implanted Sn and Sn-related defects in Ge(2010)
Authors: Stefan Decoster, Stefaan Cottenier, Ulrich Wahl, André Vantomme
Pages: 1 - 6 - Lattice location of the group V elements As and Sb in ZnO(2009)
Authors: Ulrich Wahl, Stefan Decoster
Pages: 4803 - 4806 - Implantation-induced damage in Ge: strain and disorder profiles during defect accumulation and recovery(2009)
Authors: Stefan Decoster, André Vantomme
- Ion implantation in Ge: structural and electrical investigation of the induced lattice damage & study of the lattice location of implanted impurities.(2009)
Authors: Stefan Decoster, André Vantomme, Ulrich Wahl
Number of pages: 261