Researcher
Puneet Srivastava
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2012 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2008 → 30 Sep 2012 - Department of Electrical Engineering (ESAT) (Department)
Member
From12 Nov 2007 → 31 Jul 2008
Projects
1 - 1 of 1
- Technology Integration of GaN-on-Si HEMTs for Power Electronics ApplicationsFrom9 Sep 2008 → 10 Jul 2012Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 21
- GaN-on-Si HEMTs for 50 V RF applications(2012)
Authors: Denis Marcon, Puneet Srivastava
Pages: 325 - 328Number of pages: 4 - AlGaN-on-Si-based 10-um pixel-to-pixel pitch hybrid imagers for the EUV range(2011)
Authors: Pawel Malinowski, Puneet Srivastava, Robert Pierre Mertens, Chris Van Hoof
Pages: 1561 - 1563 - GaN-based HEMTs tested under high temperature storage test(2011)
Authors: Denis Marcon, Puneet Srivastava, Robert Pierre Mertens, Gustaaf Borghs
Pages: 1717 - 1720 - Investigation of light-induced deep-level defect activation at the AlN/Si interface(2011)
Authors: Domenica Visalli, Marleen Van Hove, Maarten Leys, Joff Derluyn, Eddy Simoen, Puneet Srivastava, Karen Geens, Stefan Degroote, Marianne Germain, Anh Phuc Duc Nguyen, et al.
Pages: 94101 - Investigation of light-induced deep-level defect activation at the AlN/Si interface(2011)
Authors: Domenica Visalli, Puneet Srivastava, Andre Stesmans, Gustaaf Borghs
Pages: 94101 - 94101 - HBM ESD robustness of GaN-on-Si Schottky diodes(2011)
Authors: Shih-Hung Chen, Puneet Srivastava, Denis Marcon, Guido Groeseneken
Pages: 589 - 598 - Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal(2011)
Authors: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pages: 2216 - 2218 - Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance(2011)
Authors: Puneet Srivastava, Pawel Malinowski, Denis Marcon, Domenica Visalli, Ingrid De Wolf, Robert Pierre Mertens, Gustaaf Borghs
Number of pages: 4 - Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2 µm buffer thickness by local substrate removal(2011)
Authors: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pages: 30 - 32 - Backside illuminated AlGaN-on-Si UV detectors integrated by high density flip-chip bonding(2011)
Authors: Pawel Malinowski, Puneet Srivastava, Chris Van Hoof, Robert Pierre Mertens
Pages: 2476 - 2478