Semiconductors with increased carrier concentration

A semiconductor device comprising: i. a first structure (100) made of a first doped semiconductor material of a first doping type, ii. a metal (300) in contact with the first structure (100), and iii. at least a second structure (200) made of a second doped semiconductor material of the first doping type in contact with the first structure (100), wherein a band off-set for majority charge carriers between the first doped semiconductor material and the second doped semiconductor material is sufficiently large for charge carriers from the second doped semiconductor material to be transferred into the first doped semiconductor material.

Patent Publication Number: EP3312883

Year filing: 2021

Year approval: 2021

Year publication: 2021

Status: Assigned

Technology domains: Semiconductors, Micro-structure and nano-technology

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven