A method of forming a semiconductor device structure

The present invent provides a method comprising forming (101) a first wafer (10) comprising a first substrate (11) of a group IV semiconductor, and a group III-V semiconductor device structure (12) formed by selective area epitaxial growth on a surface portion (13a) of a front side (13) of the first substrate (11). The method further comprises forming (102) a second wafer (20) comprising a second substrate (21) of a group IV semiconductor, and a group IV semiconductor device structure (22) formed on a front side (23) of the second substrate (21), and bonding (103) the first wafer (10) to the second wafer (20) with the front side (13) of the first substrate (11) facing the front side (23) of the second wafer (21).

Patent Publication Number: EP3806152

Year filing: 2022

Year approval: 2022

Year publication: 2022

Status: Assigned

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven