First-principles simulations of the electron-phonon coupling and transport properties of ultrathin Si chanels

Modeling work will be done within the state-of-the-art atomistic modelling simulation platform ATOMOS. We explore the properties and design of Quantum dots made of Si or other combination of materials and heterojunctions. Using and expanding advanced quantum-transport atomistic tools and methods in order to capture time-dependent and correlation effects. We will investigate the fundamental physics and performance of innovative quantum-dot devices with as target application qbits for quantum computer and possibly optoelectronics.