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Publication
Organic- and QD-based image sensors integrated on 0.13 μm CMOS ROIC for high resolution, multispectral infrared imaging
Book Contribution - Book Chapter Conference Contribution
Thin-film materials with absorption in the NIR and SWIR wavelength range enable monolithically
integrated, high resolution CMOS image sensors with infrared sensitivity. This work describes imagers
using polymer (organic) and lead sulfide quantum dot (PbS QD) absorbers. With different thin photodiode
stacks (<300 nm), we report EQE values of 30%, 31% and 15% at the target wavelengths of 940, 1050 and
1450 nm, respectively. Photolithographic patterning of thin-film stacks allows wafer level upscaling and
high pixel density. Here, we demonstrate isolated thin-film islands with pitch down to 40 μm and resolution
of 640 ppi and we present the concept of incorporating different absorbers in adjacent pixels for
multispectral focal plane arrays. Finally, image acquisition is demonstrated on 5 μm pixel pitch FPA using
custom, 130 nm technology node CMOS readout.
Book: 2019 International Image Sensor Workshop (IISW)
Number of pages: 4
Publication year:2019