Development of novel ultra-precise sensitive sensors based on a newly discovered material

In this project, the PhD student will optimise the properties of the newly discovered material from the basic material properties to the desired sensor specifications. Different waferscales will be studied, focusing on how to integrate the new material in existing, industry-relevant fabrication platforms based on silicon. To facilitate this, different thin film synthesis machines combined with fabrication and characterization techniques will be used. Within the FuN group, we have different synthesis systems available, including Molecular Beam Epitaxy, Chemical Vapor Deposition, etc, while the fabrication methods comprise UV, e-beam lithography as well as Reactive Ion Etching. The material will be extensively characterized, as we have different characterization techniques available, which include structural (XPS, XRD, etc.), electrical (IV, CV, etc.), and optical (FTIR, UV-VIS, etc.) methods under (near) ambient conditions as well as under low temperature conditions.