On the Low-Frequency Noise of High-κ Gate Stacks: What Did We Learn?

© 2018 IEEE. A review is given on the low-frequency (LF) noise behavior of transistors fabricated with a high-κ/metal gate stack. It is shown that the implementation of a work function tuning metal oxide cap layer has a pronounced impact on the gate stack quality and more in particular on the effective density of oxide traps.

ISBN:9781538644409

Publication year:2018

BOF-keylabel:yes

IOF-keylabel:yes

Authors from:Government, Higher Education