Determination of the single crystal Ge Young's modulus between room temperature and melting temperature using the impulse excitation technique

In the present study, the vibrational properties of single crystal Ge samples are studied between room and melting temperature using the impulse excitation technique (IET). From the IET measurements, the temperature dependent Young’s moduli Eijk of single crystal Ge are extracted in the 100, 110 and 111 crystallographic directions in inert atmosphere. The results show an anomalous softening of an elastic constant around 890 °C temperature during the measurement. The Young’s moduli values between 88 to 132 GPa are obtained close to the melting temperature, depending on the crystallographic direction. Empiric expressions are derived for the temperature dependence of E100, E110 and E111.

Publication year:2014

BOF-keylabel:yes

IOF-keylabel:yes

Authors from:Higher Education

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