Functional oxides with tailored properties for nanoelectronics.

The most important component for increasing performance of micro-electronics, the MOSFET, will probably not be suitable for scaling below 5 to 10 nm. This proposal aims to study devices based on functional oxides for memories and transistors. The use of functional oxides will allow new device concepts which will make a further increase in performance possible. De main topic will be the electronic Metal-Insulator-Transition (MIT), a correlated electron phenomenon that occurs in transition-metal oxides. The project will focus on the use of functional oxides applied in field-effect devices for transistors and MIM-capacitors for memories. The intention is to: identify processes and materials for transistors/memories with functional oxides: The influence of the material properties on the field-effect and the memory properties will be investigated. build devices and develop adequate characterization methods: Characterization techniques will be selected or developed to judge the presence of an MIT or other mechanism. Physics-based modeling will be developed to explain and improve the properties of the fabricated devices. show the attainability and the possible barriers for devices with functional oxides. The final goal of this project is to demonstrate a unique pioneering device with a functional oxide.

Keywords:Functional oxides, Nanoelectronics, Metal-insulator transition, Mott insulators, Transition-metal oxides, Memory, Field-effect

Disciplines:Nanotechnology, Design theories and methods