Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer Interuniversitair Micro-Electronica Centrum vzw KU Leuven
Nanoelectronics holds significant promise for two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) applications. On a polycrystalline WS2 monolayer created by metal-organic chemical vapor deposition (MOCVD) at 950 & DEG;C, we studied the nucleation, growth, and development of Al2O3 atomic layer deposition (ALD) on a SiO2/Si substrate. In this investigation, we used various complementary characterization methods, such as ...