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Increasing the silicon carbide content in laser sintered reaction bonded silicon carbide KU Leuven
© 2017 The American Ceramic Society. Additive manufacturing (AM) of ceramics is in its infancy. Compared to conventional shaping processes, AM is more economical for small series and comes with a higher degree of design freedom. AM technologies like laser sintering can be used to produce preforms for reaction bonded silicon carbide (RBSC) parts. After laser sintering, liquid silicon infiltration is carried out and the preforms are transformed ...
Direct laser sintering of reaction bonded silicon carbide with low residual silicon content KU Leuven
© 2018 Elsevier Ltd Additive manufacturing (AM) techniques are promising manufacturing methods for the production of complex parts in small series. In this work, laser sintering (LS) was used to fabricate reaction bonded silicon carbide (RBSC) parts. First, silicon carbide (SiC) and silicon (Si) powders were mixed in order to obtain a homogeneous powder. This powder mixture was subsequently laser sintered, where the Si melts and re-solidifies to ...
Additive Manufacturing of Technical Ceramics: Laser Sintering of Alumina and Silicon Carbide KU Leuven
Technical ceramics, like alumina (Al2O3) and silicon carbide (SiC), display a number of material properties which make them interesting candidates for various engineering applications. They are typically produced through a powder metallurgy (PM) process, consisting of (1) feedstock preparation, (2) shaping, (3) debinding and (4) densification, with possible additional machining operations. Shaping, the second step in the PM process, is ...
Nucleation of Small Silicon Carbide Dust Clusters in AGB Stars KU Leuven
Silicon carbide (SiC) grains are a major dust component in carbon-rich asymptotic giant branch stars. However, the formation pathways of these grains are not fully understood. We calculate ground states and energetically low-lying structures of (SiC) n , n = 1, 16 clusters by means of simulated annealing and Monte Carlo simulations of seed structures and subsequent quantum-mechanical calculations on the density functional level of theory. We ...
First characterization of novel silicon carbide detectors with ultra-high dose rate electron beams for FLASH radiotherapy Universiteit Antwerpen
Ultra-high dose rate (UHDR) beams for FLASH radiotherapy present significant dosimetric challenges. Although novel approaches for decreasing or correcting ion recombination in ionization chambers are being proposed, applicability of ionimetric dosimetry to UHDR beams is still under investigation. Solid-state sensors have been recently investigated as a valuable alternative for real-time measurements, especially for relative dosimetry and beam ...
Deposition of diamond films on single crystalline silicon carbide substrates Universiteit Hasselt
Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the ...
Evaluation of Micro-EDM (μEDM) Characteristics of Conductive Silicon Carbide Using a Coupled Thermo-Structural Process Model KU Leuven
© 2018 World Scientific Publishing Company. In this work, micro-EDM (μEDM) characteristics of conductive SiC have been evaluated using the knowledge of existing coupled thermo-structural model. A simplified thermo-structural model of μEDM process on conductive SiC has been used to simulate the μEDM process on conductive SiC. So far, the studies have used traditional melting and evaporation removal mechanism during EDM simulation which is ...
Reusability Limits of Carbon/Silicon Carbide Heat Shield Materials Part 2: Volatilization Detection by Space-& Time-Resolved Emission Spectroscopy Vrije Universiteit Brussel
Experiments of C/SiC heat shield materials have been carried out in air plasmas at various pressures and heat flux levels to study their reusability limits. A strong and sudden surface temperature increase was observed for such carbon matrix composite materials during selected test conditions. This part focuses on optical emission spectroscopy methods to provide information on spatially and temporally resolved species volatilization. No Si ...
Difference in clinical target lesion revascularization between a silicon carbide-coated and an uncoated thin strut bare-metal stent Universiteit Antwerpen
Background Bare-metal stents trigger a foreign body reaction, resulting in neointima formation and restenosis. Silicon carbide (SiC) coating shields the metal from circulating blood and vessel wall, both potential sources of neointima smooth muscle cells. Methods We investigated whether SiC-coated stents (PRO-Kinetic) have lower clinical target lesion revascularization (TLR) rates than do uncoated bare-metal stents (Vision). Stents were ...