Reliability of High Mobility (Si)Ge Channel pMOSFETs for Future CMOS Applications - Toward Reliable Ultra-thin EOT Nanoscale Transistors (Betrouwbaarheid van hoge mobiliteits-(Si)Ge kanaal pMOSFETs voor geavanceerde CMOS toepassingen - naar betrouwbare nm KU Leuven
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled EOT down to 5Ã…, a 10 year device lifetime at operating voltage cannot be guaranteed anymore due to severe Negative Bias Temperature Instability (NBTI). Meanwhile, the use of high-mobility channels is ...