Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process KU Leuven
© Materials Research Society 2018. In this paper new materials and substrate approaches are discussed which have potential to provide (Al)GaN buffers with a better crystal quality, higher critical electrical field, or thickness and have the potential to offer co-integration of GaN switches at different reference potentials, while maintaining lower wafer bow and maintaining complementary metal-oxide semiconductor (CMOS) compatibility. Engineered ...