Empowering GaN HEMT models: The gateway for power amplifier design KU Leuven
The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent-circuit models for GaN HEMTs, which are the preferred devices for high-power high-frequency applications. This overview is meant to provide a practical modeling know-how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge ...