Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy KU Leuven
Indium containing III-Nitride layers are predominantly grown by heteroepitaxy on foreign substrates, most often Al2O3, SiC and Si. We have investigated the epitaxial growth of InxGa1-xN (InGaN) alloys on Ge substrates. First we looked at the influence of buffer layers between the InGaN and Ge substrate. When applying a high temperature (850 °C) GaN buffer, the InGaN showed superior crystal quality. Furthermore the influence of growth parameters ...