Method for processing a laser device Interuniversitair Micro-Electronica Centrum vzw
The invention relates to a method for processing a laser device (10), in particular a III-V on silicon laser, comprising: providing a carrier substrate (11); forming a grating structure (12) on the carrier substrate (11), wherein the grating structure (12) delimits a cavity (13) on a surface of the carrier substrate (11); placing a die (16) in the cavity (13) and bonding the die (16) to the carrier substrate (11), wherein the die (16) comprises an active region (17) from at least one III-V semiconductor material; transferring the die (16) from the carrier substrate (11) to a silicon substrate ...