CMOS ULTRA-HIGH-SPEED BURST MODE IMAGERS Vrije Universiteit Brussel
A full depleted high-speed photosensitive pixel is presented, where its depletion electrostatic profile and the back bias technique are discussed. A pixel test array with 48 � 48 pixels has been demonstrated confirming a good trade-off between the speed and sensitivity. The device achieves 7 e– read noise at 80 μV/e– conversion gain. Its mean charge transfer time is estimated to 6 ns. Besides the photosensitive device, a novel in-situ storage ...