IMPLANT FREE QUANTUM WELL TRANSISTOR, METHOD FOR MAKING SUCH AN IMPLANT FREE QUANTUM WELL TRANSISTOR AND USE OF SUCH AN IMPLANT FREE QUANTUM WELL TRANSISTOR KU Leuven
An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate, the implant region being substantially positioned at a side of the quantum well region opposing the gate region.