A method for manufacturing a magnetic structure for a magnetic device showing a giant VCMA effect Interuniversitair Micro-Electronica Centrum vzw
The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the Voltage Control of Magnetic Anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO3 (STO) stack on the bottom electrode layer by Atomic Layer Deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and ...