High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance KU Leuven
© 2014 IEEE. An optimized TiN/amorphous-Silicon/TiN (MSM) two-terminal bidirectional selector is proposed for high density RRAM arrays. The devices show superior performance with high drive current exceeding 1MA/cm2 and half-bias nonlinearity of 1500. Excellent reliability is fully demonstrated on 40nm-size crossbar structures, with statistical ability to withstand bipolar cycling of over 106 cycles at drive current conditions and thermal ...