A 3D integrated charge-coupled device memory Interuniversitair Micro-Electronica Centrum vzw
This disclosure relates to a charge-coupled device (CCD) memory. The CCD memory is 3D integrated. The CCD memory comprises a gate stack with a plurality of gate layers and spacer layers alternatingly arranged one on the other, and with a plurality of semiconductor-based channels extending in the stack. The channels may be formed from a semiconductor oxide material. Further, the CCD memory comprises dielectric layers, wherein each dielectric layer is arranged between one of the channels and at least one of the gate layers. Each channel of the CCD memory forms, in combination with the gate ...