Method for processing a FET device Interuniversitair Micro-Electronica Centrum vzw
The disclosure relates to a method for processing a FET device, in particular a metal-oxide-semiconductor field-effect transistor, MOSFET, or a thin-film-transistor, TFT. The method comprises: providing a substrate (11); forming a first oxide semiconductor layer (17) and a second oxide semiconductor layer (18) above the substrate (11); forming a source structure (25-1) and a drain structure (25-2) on the second oxide semiconductor layer (18); forming a gate structure (43) on the first oxide semiconductor layer (17); wherein the first oxide semiconductor layer (17) forms a channel between the ...