A memory cell, device and method for writing to a memory cell. Interuniversitair Micro-Electronica Centrum vzw
According to an aspect there is provided a memory cell (10, 50). The memory cell (10, 50) comprises: a first (21, 61) and a second (22, 62) electrode; a spin-orbit-torque, SOT, layer (30, 70) comprising a first (31, 71) and a second (32, 72) electrode contact portion arranged in contact with the first (21, 61) and the second (22, 62) electrode, respectively, and an intermediate portion (33, 73) between the first and second electrode contact portions (31, 32, 71, 72); a first magnetic tunnel junction, MTJ, layer stack (41, 81) arranged in contact with the intermediate portion (33, 73); and a ...