A method for forming & semiconductor device. Interuniversitair Micro-Electronica Centrum vzw
The disclosure relates to a method for forming a semiconductor device, the method comprising: forming a device structure on a substrate, the device structure comprising a fin structure comprising a pair of source/drain bodies and a channel region between the pair of source/drain bodies, the channel region comprising at least one channel layer, and the device structure further comprising a gate structure extending across the channel region of the fin structure; forming a metal layer over the source/drain bodies; etching the metal layer to define respective source/drain contacts on the ...