A gate all around device with a work function mismatch betwen inner and outer gates. Interuniversitair Micro-Electronica Centrum vzw
This disclosure relates to a gate all around (GAA) device made based on a GAA transistor structure that comprises a stack of multiple semiconductor channel layers and one or more first gate layers alternatingly arranged along a first direction. Each channel layer is encapsulated by a gate dielectric layer, and each first gate layer is arranged between two channel layers following another. The GAA transistor structure further comprises two second gate layers sandwiching the stack in a second direction and connected to the first gate layers. Each first gate layer is made of a first work ...