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High-chi, Si-Containing Block Copolymers and Process Strategies for Directing Their Self-Assembly

Tijdschriftbijdrage - Tijdschriftartikel

© 2017, Tokai University. All rights reserved. Si-containing block copolymer line and space patterns with 19.8 nm periodicity have been fabricated using lithographically defined guiding patterns. All processes were performed using leading edge production level nanofabrication tools on the 300 mm wafer scale. Under the conditions described here, top-down micrographs without dislocation defects can be readily obtained using automated inspection recipes and relatively low magnification. Future work will be directed toward continued resolution improvements, characterizing the through-film morphology, and demonstrating pattern transfer.
Tijdschrift: Journal of Photopolymer Science and Technology
ISSN: 0914-9244
Issue: 2
Volume: 30
Pagina's: 187 - 190
Aantal pagina's: 4
Jaar van publicatie:2017