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Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density

Tijdschriftbijdrage - Tijdschriftartikel

The change of the energy profile of the initially present HfSiO defects in nMOSFETs after Vth adjustment by As and Ar implantations is investigated. A fundamental correlation between the density of energetically deep traps and the initial Vth is revealed, suggesting that the negative bulk charge in HfSiO controls the Vth. © 2010 IEEE.
Tijdschrift: IEEE Electron Device Letters
ISSN: 0741-3106
Issue: 4
Volume: 31
Pagina's: 272 - 274
Jaar van publicatie:2010
Trefwoorden:Elektronica en elektrotechniek