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Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?

Tijdschriftbijdrage - Tijdschriftartikel

© 2018 IOP Publishing Ltd. In order to improve the low-frequency noise of input/output (I/O) p-metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a 5 nm SiO2/2 nm HfO2/5 nm TiN gate stack for DRAM applications, different post-deposition treatments have been investigated. Decoupled Plasma Nitridation with various strengths is compared with an SF6 plasma anneal. Wafers with and without an Al2O3 cap, serving as a threshold voltage shifter have also been included in the study. It is shown that the best results, i.e. the lowest 1/f noise magnitude, have been found for the SF6-treated I/O pMOSFETs, reaching in the best case a value comparable with SiO2/polycrystalline silicon reference devices.
Tijdschrift: Semiconductor Science and Technology
ISSN: 0268-1242
Issue: 1
Volume: 34
Aantal pagina's: 6
Jaar van publicatie:2019
Trefwoorden:Materiaalkunde, Elektronica en elektrotechniek, Vast stoffysica, natuurkunde van vloeistoffen en plasma�s