Metaal-isolator overgangen in gecorreleerde elektron systemen.

In this project, the goal is to induce a metal-insulator transition (MIT) in an oxide thin film, above room temperature, using a low voltage. There exists a broad range of materials that display a MIT, typically as a function of temperature or as a function of doping. The most prominent candidates for this study are compounds with strong electron correlation such as the cuprates, the manganates and the vanadates. To realise this goal two main research lines will be followed. First, electric field effect experiments will be performed on ultra-thin films of known oxides that already display a MIT. For most of these oxides, field effect experiments have never been performed since in order to induce a substantial amount of carriers, stringent requirements on the thickness, the roughness and the dielectric properties of the gate oxide must be met. For the second research line performed at UAntwerp by Prof. Peeters, ab-initio and extended DMFT calculations will be performed to design new materials and heterostructures, wherein the appearance of the MIT can be confined within a 2D monolayer and/or a very narrow phase diagram range. Such materials will then be grown in thin films and the MIT will be tested experimentally.

Trefwoorden:Electron systems