Spin orbit torque magnetoresistive random access memory device

The disclosed technology relates generally to magnetic random access memory, and more particularly to spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM). According to an aspect, a MRAM device comprises a first transistor, a second transistor, and a resistive memory element. The resistive memory element comprises a magnetic tunnel junction (MTJ) pillar arranged between a top electrode and bottom electrode having a first terminal and a second terminal. According to another aspect, a method of using the MRAM device is disclosed.

Octrooi-publicatienummer: US11004490

Jaar aanvraag: 2021

Jaar toekenning: 2021

Jaar van publicatie: 2021

Status: Toegewezen

Technologiedomeinen: Computertechnologie, Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven