Method for forming a group iii nitride material or a sic material on a silicon substrate

The present invention relates to semiconductor process technology and devices. In particular, the present invention relates to a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0,01 µmol/cm 2 of one or more organometallic compounds containing Al, in a flow of less than 5 µmol/min. The invention is equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

Octrooi-publicatienummer: EP1842941

Jaar aanvraag: 2018

Jaar toekenning: 2018

Jaar van publicatie: 2018

Status: Toegewezen

Technologiedomeinen: Semiconductoren, Oppervlaktetechniek, coating

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven