Magnetic device with a hybrid free layer stack

The present invention relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device comprises a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled across the interlayer through exchange interaction.

Octrooi-publicatienummer: EP3800643

Jaar aanvraag: 2021

Jaar toekenning: 2022

Jaar van publicatie: 2021

Status: Aangevraagd

Technologiedomeinen: Computertechnologie, Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven