Onderzoeker
Yashwanth Balaji
- Disciplines:Nanotechnologie, Sensoren, biosensoren en slimme sensoren, Andere elektrotechniek en elektronica, Ontwerptheorieën en -methoden
Affiliaties
- Elektronische Circuits en Systemen (ECS) (Afdeling)
Lid
Vanaf1 aug 2020 → 31 dec 2020 - Afdeling ESAT - MICAS, Micro-elektronica en Sensoren (Afdeling)
Lid
Vanaf7 jul 2016 → 6 jul 2020
Projecten
1 - 1 of 1
- Tunnel FET met 2-dimensionele transitie metaal dichalcogenide halfgeleiders als kanaal materiaalVanaf5 jul 2016 → 14 sep 2020Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 10 van 15
- Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy(2020)
Auteurs: Wouter Mortelmans, Ankit Nalin Mehta, Yashwanth Balaji, Stefan De Gendt, Marc Heyns, Clement Merckling
- On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides(2020)
Auteurs: Wouter Mortelmans, Yashwanth Balaji, Ruishen Meng, Michel Houssa, Stefan De Gendt, Marc Heyns, Clement Merckling
Pagina's: 27508 - 27517 - Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2(2020)
Auteurs: Wouter Mortelmans, Yashwanth Balaji, Michel Houssa, Stefan De Gendt, Marc Heyns, Clement Merckling
- MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts(2020)
Auteurs: Yashwanth Balaji, Guido Groeseneken
- Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems(2019)
Auteurs: Alessandra Leonhardt, Yashwanth Balaji, Stefan De Gendt
Pagina's: 1486 - 1503 - Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity - Controllable Transistors(2018)
Auteurs: Yashwanth Balaji, Iuliana Radu, Francky Catthoor
Pagina's: 7039 - 7047 - Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S(2018)
Auteurs: Haodong Zhang, Yashwanth Balaji, Ankit Nalin Mehta, Marc Heyns, Iuliana Radu, Wilfried Vandervorst, Annelies Delabie
Pagina's: 6172 - 6178 - Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures(2018)
Auteurs: Yashwanth Balaji, Iuliana Radu, Guido Groeseneken
Pagina's: 1048 - 1055 - Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors(2018)
Auteurs: Yashwanth Balaji, Iuliana Radu, Francky Catthoor
Aantal pagina's: 2 - Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures(2017)
Auteurs: Yashwanth Balaji, Iuliana Radu, Guido Groeseneken
Pagina's: 106 - 109Aantal pagina's: 4