Onderzoeker
Ruishen Meng
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Halfgeleiderfysica (Afdeling)
Lid
Vanaf18 okt 2018 → 17 okt 2022
Projecten
1 - 1 of 1
- Verkenning van door gatendoping geïnduceerd ferromagntisme in tweedimensionale materialenVanaf19 okt 2018 → 21 feb 2023Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 10 van 15
- Evidence for intrinsic magnetic scatterers in the topological semimetal (Bi2)5(Bi2Se3)7(2023)
Auteurs: Clement Merckling, Ruishen Meng, Michel Houssa, Joris Van de Vondel, Stefan De Gendt
- Ferromagnetism in two-dimensional metal dibromides induced by hole-doping(2023)
Auteurs: Ruishen Meng, Michel Houssa
- Exploration of hole-doping-induced ferromagnetism in two-dimensional materials(2023)
Auteurs: Ruishen Meng, Michel Houssa
- Hole-doping induced ferromagnetism in 2D materials(2022)
Auteurs: Ruishen Meng, Lino da Costa Pereira, Jean-Pierre Locquet, Valeri Afanasiev, Michel Houssa
- Interaction of graphene with Au n clusters: a first-principles study(2022)
Auteurs: Ruishen Meng, Ewald Janssens, Joris Van de Vondel, Valeri Afanasiev, Michel Houssa
- Two dimensional V2O3 and its experimental feasibility as robust room-temperature magnetic Chern insulator(2021)
Auteurs: Simon Mellaerts, Ruishen Meng, Mariela Andrea Menghini, Valeri Afanasiev, Maria Seo, Michel Houssa, Jean-Pierre Locquet
Pagina's: 1 - 8 - Role of Stronger Interlayer van der Waals Coupling in Twin-Free Molecular Beam Epitaxy of 2D Chalcogenides(2021)
Auteurs: Ruishen Meng, Michel Houssa, Stefan De Gendt, Marc Heyns, Clement Merckling
- Quarter-filled Kane-Mele Hubbard model: Dirac half metals(2021)
Auteurs: Simon Mellaerts, Ruishen Meng, Valeri Afanasiev, Maria Seo, Michel Houssa, Jean-Pierre Locquet
- Doping-induced ferromagnetism in InSe and SnO monolayers(2021)
Auteurs: Michel Houssa, Ruishen Meng, Valeri Afanasiev, Andre Stesmans
Pagina's: 88 - 94 - Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping(2020)
Auteurs: Ruishen Meng, Michel Houssa, Valeri Afanasiev, Andre Stesmans