< Terug naar vorige pagina
Onderzoeker
Pavel Poliakov
- Disciplines:Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Geassocieerde Afdeling ESAT - INSYS (INSYS), Integrated Systems (Afdeling)
Lid
Vanaf1 aug 2020 → 30 sep 2012 - Geassocieerde Afdeling ESAT - INSYS, Integrated Systems (Afdeling)
Lid
Vanaf1 okt 2008 → 30 sep 2012 - Departement Elektrotechniek (ESAT) (Departement)
Lid
Vanaf1 sep 2007 → 29 feb 2008
Publicaties
1 - 9 van 9
- Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories(2012)
Auteurs: Pavel Poliakov, Cultureman Vaglio Pret, Jan Van Houdt, Wim Dehaene
Pagina's: 525 - 529 - Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in NAND Flash Arrays(2012)
Auteurs: Pavel Poliakov, Jan Van Houdt, Wim Dehaene
Pagina's: 164 - 166 - Linking EUV lithography line edge roughness and 16 nm NAND memory performance(2012)
Auteurs: Cultureman Vaglio Pret, Pavel Poliakov, Wim Dehaene, Jan Van Houdt
Pagina's: 24 - 28 - Cross-cell Interference Variability Aware Model of Fully Planar NAND Flash Memory Including Line Edge Roughness(2011)
Auteurs: Pavel Poliakov, Jan Van Houdt, Wim Dehaene
Pagina's: 919 - 924 - Circuit Design for Bias Compatibility in Novel FinFET based floating RAM(2010)
Auteurs: Pavel Poliakov, Bram Rooseleer, Wim Dehaene
Pagina's: 183 - 187 - Circuit Design for Bias Compatibility Investigation of Bulk FinFET Based Floating Body RAM(2009)
Auteurs: Pavel Poliakov, Bram Rooseleer, Wim Dehaene, Diederik Verkest
Pagina's: 7 - 12 - Variability aware modeling of SoCs: from device variations to manufactured system yield(2009)
Auteurs: Pavel Poliakov
Pagina's: 547 - 553Aantal pagina's: 7 - Spacer-defined EUV lithography reducing variability of 12nm NAND Flash memories
Auteurs: Pavel Poliakov, Cultureman Vaglio Pret, Jan Van Houdt, Wim Dehaene
Pagina's: 33 - 36 - Impact of Line Edge Roughness on Cell-to-Cell Coupling Variability in NAND Flash Arrays
Auteurs: Pavel Poliakov, Wim Dehaene
Pagina's: 41 - 44