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Onderzoeker
Jan Vanhellemont
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Vakgroep Vastestofwetenschappen (Departement)
Lid
Vanaf1 feb 2009 → 13 feb 2016
Publicaties
31 - 40 van 107
- Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth
Auteurs: Eiji Kamiyama, Koji Sueoka, Jan Vanhellemont
Pagina's: P104 - P109 - Surface-induced charge at a Ge (100) dimer surface and its interaction with vacancies and self-interstitials
Auteurs: Eiji Kamiyama, Koji Sueoka, Jan Vanhellemont
- Impact of plane thermal stress near the melt/solid interface on the v/G criterion for defect-free large diameter single crystal Si growth
Auteurs: Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont, Kozo Nakamura
Pagina's: P69 - P72 - SiOx precipitate composition in Si, revisited : discussion closed?
Auteurs: Jan Vanhellemont
Pagina's: 597 - 602 - Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
Auteurs: E Gaubas, Eddy Simoen, Jan Vanhellemont
Pagina's: P3108 - P3137 - Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
Auteurs: E Gaubas, A Uleckas, Jan Vanhellemont
Pagina's: 256 - 266 - Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
Auteurs: Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont
Pagina's: 97 - 104 - Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers
Auteurs: Xinpeng Zhang, Xiangyang Ma, Deren Yang, Jan Vanhellemont
- Intrinsic point defect behavior close to silicon melt/solid interface
Auteurs: Jan Vanhellemont, Eiji Kamiyama, Kozo Nakamura, Koji Sueoka
Aantal pagina's: 1 - Iron-boron pair dissociation in silicon under strong illumination
Auteurs: Xiaodong Zhu, Deren Yang, Xuegong Yu, Jian He, Yichao Wu, Jan Vanhellemont, Duanlin Que