Onderzoeker
Jan Vanhellemont
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Vakgroep Vastestofwetenschappen (Departement)
Lid
Vanaf1 feb 2009 → 13 feb 2016
Publicaties
11 - 20 van 107
- Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials(2014)Volume: 1583
Auteurs: Eiji Kamiyama, Koji Sueoka, Jan Vanhellemont, A Cavallini, SK Estreicher
Pagina's: 60 - 63 - DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si(2012)Volume: 9
Auteurs: Koji Sueoka, Eiji Kamiyama, Hiroaki Kariyazaki, Jan Vanhellemont, S Pizzini, G Kissinger, H YamadaKaneta, J Kang
Pagina's: 1947 - 1951 - A density functional theory study of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing Si single crystals(2012)Volume: 50
Auteurs: Koji Sueoka, Eiji Kamiyama, Hiroaki Kariyazaki, Jan Vanhellemont, E Simoen, C Claeys, P Stallhofer, RJ Falster, C Mazure
Pagina's: 43 - 52 - Si crystal growth from a melt: the secrets behind the v/G criterion(2012)Volume: 50
Auteurs: Jan Vanhellemont, Eiji Kamiyama, Koji Sueoka, E Simoen, C Claeys, P Stallhofer, RJ Falster, C Mazure
Pagina's: 23 - 41 - Diode characteristics and thermal donor formation in germanium-doped silicon substrates(2012)Volume: 50
Auteurs: Joan Marc Rafi, Jan Vanhellemont, Eddy Simoen, Jiahe Chen, Miguel Zabala, Deren Yang, E Simoen, C Claeys, P Stallhofer, RJ Falster, et al.
Pagina's: 177 - 186 - Carrier lifetime studies in diode structures on Si substrates with and without Ge doping(2011)Volume: 178-179
Auteurs: A Uleckas, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen, Jan Vanhellemont, W Jantsch, F Schaffler
Pagina's: 347 - 352 - Field-enhanced electron capture by iron impurities in germanium(2011)
Auteurs: Johan Lauwaert, Siegfried Segers, Eddy Simoen, Diederik Depla, Jan Vanhellemont, Paul Clauws, Freddy Callens, Henk Vrielinck
Pagina's: 118 - 118 - Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks(2011)
Auteurs: Jiahe Chen, E Cornagliotti, X Loozen, E Simoen, Jan Vanhellemont, Johan Lauwaert, Henk Vrielinck, J Poortmans
- Analysis of Auger recombination characteristics in high resistivity Si and Ge(2011)Volume: 178-179
Auteurs: A Uleckas, E Gaubas, T Ceponis, K Zilinskas, R Grigonis, V Sirutkaitis, Jan Vanhellemont, W Jantsch, F Schaffler
Pagina's: 427 - 432 - On intrinsic point defect cluster formation during Czochralski crystal growth(2009)Volume: 6
Auteurs: Jan Vanhellemont, Piotr Spiewak, Koji Sueoka, Igor Romandic, J Rabier, E Le Bourhis
Pagina's: 1906 - 1911