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A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se2 solar cells

Boekbijdrage - Boekhoofdstuk Conferentiebijdrage

A new multi-stack approach with contact openings was investigated for front surface of Cu(In,Ga)Se-2 thin film solar cells. In this multi-stack design, a thin HfOx layer was used to protect a thicker AlOx layer from the presence of ammonia in the chemical bath deposition. The contact openings were created by using alkali solution. The lifetime decay was improved by implementing multi-stack passivation layer between CIGS/buffer layer interface. It was shown that open circuit voltage was increased by up to 30mV.
Boek: 2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
Pagina's: 1176 - 1178
Aantal pagina's: 3
ISBN:978-1-6654-1922-2
Jaar van publicatie:2021
Trefwoorden:multi-stack, front surface, passivation, CIGS, thin film photovoltaic
BOF-keylabel:ja
IOF-keylabel:ja
Toegankelijkheid:Closed