Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs

The low-frequency noise of input-output (I/O) FinFETs with 3.5 nm and 5nm SiO2 gate dielectric is studied for different processing conditions. For the thin dielectric a high-pressure (HP) deuterium anneal can improve the noise Power Spectral Density (PSD). There is no significant impact on n-channel devices, while a pronounced effect is observed for p-channel devices, especially for a HP anneal at 400 °C and 20 atm. Results are also presented on the use of a Si/SiGe superlattice architecture and it is shown that the same gate stack quality as for standard devices can be maintained.