Ultrathin two-dimensional semiconductors for novel electronic applications

The undeniable role of electronic devices in human life are pushing scientists, engineers and in a higher level the decision makers to employ new strategies to respond the requirements of human communities in new century. The significance of this case would be more manifested if we know that the semiconductor industry would be new strategical battle field for Multinational Corporation and a game-changer factor in competition among superpowers in 21st century. It is estimated that municipal management of modern cities, communication technology and transportation industry will considerably integrate the artificial intelligence and electronic systems in their new strategical designs. There are still a host number of unseen applications of semiconductor-based devices which are vital for human life health quality. Thus, the access to the new generation of efficient semiconductor materials has always been the main concern of semiconductor scientists and engineers. Atomically thin oxide semiconductors including transition, pre-transition and post transition metal oxides are important class of two dimensional (2D) materials which offer variety of distinctive physio-chemical properties. The remarkable surface properties of 2D oxide semiconductors originate from their oxygen ions of their structure. The highly polarizable O2- ions cause large nonlinear and non-uniform distribution of charges within their structure leading to electrostatic screening in the range of 0-100 nm. It generates exceptional local surface and interfacial properties resulting in emerging specific energy states near and on the surface of ultra-thin 2D oxides. The unconventional semiconducting properties of 2D oxides originate from the different hybridization states of orbitals on the surface of 2D oxides. Since cations in 2D metal oxides adopt different oxidation states and various binding configurations, a large number of 2D metal oxide structures can be characterized. Subsequently, various electronic properties ranging from metallic to insulating behavior for the same 2D metal oxides at different stoichimetries can be observed. Due to the above mentioned privileges, a wide range of applications have been introduced and many other promising developments are expecting to be realized in future. Ultra-thin films and nanostructured 2D oxide films are integral part of several advanced technologies. Some of their applications are well stablished in electronic devices like field effect transistors, however there are other applications which are recently introduced or are still under progress (like the engineering applications of 2D surface oxide of liquid alloys, Plasmonic devices, and 2D oxide heterostructures). Other systems exploit the privilege of ultra-thin nature of 2D oxide films to explore several new phenomena or to improve device performances. There are only restricted technologies which empower engineers to successfully achieve the wafer-scale deposition of 2D oxide films. Thus, one motivation of present book is to bring together the practical examples of wafer-scale deposition of 2D oxide semiconductors. Atomic layer deposition and chemical vapor deposition are the main vapor phase growth techniques which are discussed in present book. Apart from the synthesis techniques, there are several device fabrication requirements which considerably affect the performance of 2D oxide based devices. Heterostructures and heterointerfaces are the integral components of electronic devices. As a reality, the properties of 2D films are defined based on their interaction with their substrates or other heterointerfaces. Thus, one of the main topics of this book is the addressing of characteristics of 2D oxide semiconductor based heterostructures and heterointerfaces. Today, new technologies require transparent semiconductor films for a wide range of electronic and optoelectronic applications. The 2D surface oxide of liquid alloys is one of the most natural 2D structure in nature. The idea of employment of these natural 2D oxides in electronic devices can open up a new window into the world of transparent devices. However, there are still several obstacles, such as the challenge of extraction and tailoring 2D surface oxides of liquid alloys into practical devices. The other challenge is attributed to the high bandgap of these family of 2D oxides restricting their visible light absorption. In the present book, a chapter is allocated to the engineering applications of this family of 2D oxide films. Several technical aspects are discussed giving firsthand information about device fabrication to readers. The last two chapters of present book address serval electronic applications of 2D oxide semiconductors. The optoelectronic devices, as one of the first practical application of 2D oxide films, have been addressed in an individual chapter. There are still several novel trends in 2D oxide semiconductors which are introduced in the last chapter of present book. This book principally addresses applied researchers, scientists and production engineers who are focusing on the design of new functional optoelectronic and electronic 2D semiconductor based devices. As a valuable training source, students of materials engineering, electrical engineering, physics and chemistry can dig out fundamental knowledge about the basic performance of 2D oxide semiconductor based devices. A large number of literatures and references are cited in book, which will be of interest for those readdress who are demanding more information on various aspects of 2D oxide semiconductors, and electronic science.

ISBN:9780429316784

Jaar van publicatie:2020

Toegankelijkheid:Closed