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An in-depth study of high-performing strained germanium nanowires pFETs

Boekbijdrage - Boekhoofdstuk Conferentiebijdrage

An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher ID,SAT is obtained at IOFF=3nA/fin when comparing to best Si GAA nFET and similar ID,SAT is found when benchmarking to mature 14/16nm pFinFET technology at-0.5 VDD. The temperature dependent study of ID,SAT highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.

Boek: 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
Series: Digest of Technical Papers - Symposium on VLSI Technology
Pagina's: 83-84
Aantal pagina's: 2
Jaar van publicatie:2018
Auteurs:International
Toegankelijkheid:Closed