Organic- and QD-based image sensors integrated on 0.13 μm CMOS ROIC for high resolution, multispectral infrared imaging

Thin-film materials with absorption in the NIR and SWIR wavelength range enable monolithically integrated, high resolution CMOS image sensors with infrared sensitivity. This work describes imagers using polymer (organic) and lead sulfide quantum dot (PbS QD) absorbers. With different thin photodiode stacks (<300 nm), we report EQE values of 30%, 31% and 15% at the target wavelengths of 940, 1050 and 1450 nm, respectively. Photolithographic patterning of thin-film stacks allows wafer level upscaling and high pixel density. Here, we demonstrate isolated thin-film islands with pitch down to 40 μm and resolution of 640 ppi and we present the concept of incorporating different absorbers in adjacent pixels for multispectral focal plane arrays. Finally, image acquisition is demonstrated on 5 μm pixel pitch FPA using custom, 130 nm technology node CMOS readout.

Jaar van publicatie:2019