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Modelling, design and characterization of Schottky diodes in 28nm bulk CMOS for 850/1310/1550nm fully integrated optical receivers

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© 2017 IEEE. This paper presents N-well Schottky diodes for high speed optical detection in 28nm CMOS technology. These diodes enable fully integrated CMOS optical receivers suited for the 850, 1310 and 1550nm telecommunication bands. The measured 1310 and 1550nm DC responsivity is 0.71mA/W and 0.16mA/W respectively at 1.5V reverse bias when backside illumination is performed while the 850nm responsivity is 0.27mA/W at the same biasing when frontside illumination is done. This is the first reported CMOS photodetector demonstrated at these three wavelengths. The measured capacitance-to-area ratio at zero bias is 1.7mF/m2.
Boek: 2017 European Solid-State Device Research Conference (ESSDERC)
Pagina's: 224 - 227
ISBN:9781509059782
Jaar van publicatie:2017
BOF-keylabel:ja
IOF-keylabel:ja
Authors from:Higher Education
Toegankelijkheid:Open