Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

© 2019 The Japan Society of Applied Physics. We report on production compatible low temperature (≤320 °C) selective epitaxial growth schemes for boron doped Ge 0.99 Sn 0.01 and Ge in source/drain areas of FinFET and gate-all-around (GAA) strained-Ge pMOS transistors. Active B concentrations are as high as 3.2 ×10 20 cm -3 and 2.2 ×10 20 cm -3 for Ge 0.99 Sn 0.01 and Ge, respectively. The Ge:B growth is based on a cyclic deposition and etch approach using Cl 2 as an etchant, while the Ge 0.99 Sn 0.01 :B growth is selective in nature. Low Ti/p+ Ge(Sn):B contact resistivities of 3.6 ×10 -9 Ω cm 2 (Ge 0.99 Sn 0.01 ) and 5.5 ×10 -9 Ω cm 2 (Ge:B) have been obtained without any post-epi activation anneal. This work is the first demonstration of a selective, conformally doped Ge 1-x Sn x :B source/drain epi implemented on Ge FinFET device structure with fin widths down to 10 nm and on GAA devices (horizontal compressively strained-Ge nanowires).

Jaar van publicatie:2019

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:0.5

CSS-citation score:1

Auteurs:International

Authors from:Government, Higher Education