Wafer-scale fabrication of sub-10 nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition

Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga(2)O(3)n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 degrees C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga(2)O(3)n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga(2)O(3)n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light ( = 254 nm) irradiation. The improvement of TiO2-Ga(2)O(3)n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster.

Jaar van publicatie:2019

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:2

CSS-citation score:1

Auteurs:International

Authors from:Higher Education

Toegankelijkheid:Open